Kuech Group
1. "Epitaxy of Al Films on GaN Studied by Reflection High Energy Electron Diffraction and Atomic Force Microscopy," Q.Z. Liu, L. Shen, K.V. Smith, W.G. Bi, C.W. Tu, E.T. Yu, S.S. Lau, N.R. Perkins, and T.F. Kuech, Applied Physics Letters, 70 (1997) 990-992.
2. "Ohmic Contacts to n-GaN using PtIn2," D.B. Ingerly, Y.A. Chang, N.R. Perkins and T.F. Kuech, Applied Physics Letters, 70 (1997) 108.
3. "Surface Morphology of Carbon-Doped GaAs Grown by MOVPE," Jiang Li and T.F. Kuech, Journal of Crystal Growth, 170 (1997) 292-296.
4. "GaN Films Studied by Near-Field Scanning Optical Microscopy, Atomic Force Microscopy and High Resolution X-ray Diffraction," Jutong Liu, Dan Zhi, J.M. Redwing, M.A. Tischler, and T.F. Kuech, Journal of Crystal Growth, 170 (1997) 357-361.
5. "Ultrafast Carrier Trapping in Oxygen-doped Metal-organic Vapor Phase Epitaxy GaAs," J. U. Kang, M.Y. Frankel, J.-W. Huang and T.F. Kuech, Applied Physics Letters, 70 (1997) 1560-1562.
6. Conference Proceeding: "Effect of Growth Parameters and Local Gas Phase Concentrations on the Uniformity and Properties of GaN/Sapphire Grown by HVPE," S.A. Safvi, N. Perkins, and T.F. Kuech, Materials Research Society Symposium Proceedings, 449 (1997) 289-294.
7. Conference Proceeding: "MOVPE Gas Phase Chemistry for Reactor Design and Optimization," S.A. Safvi, T.F. Kuech, A. Thon, J.M. Redwing, J.S. Flynn, and M.A. Tischler, Materials Research Society Symposium Proceedings, 449 (1997) 101-106.
8. Conference Proceeding: "Study of Traps in GaN by Thermally Stimulated Current," R. Zhang, Z. Huang, J.C. Chen, Y. Zhang, T.F. Kuech, Materials Research Society Symposium Proceedings, 449 (1997) 633-638.
9. Conference Proceeding: "Deep Levels in GaN Studied by Extrinsic Photoconductivity Measurements," R. Zhang, Z. Huang, B. Guo, J.C. Chen, L. Yan, Y. Zhang, T.F. Kuech, Materials Research Society Symposium Proceedings, 449 (1997) 561-566.
10. "Growth of InAs\GaSb Layer Superlattices by MOVPE III. Use of UV Absorption to Monitor Alkyl Stability in the Reactor," G.R. Booker, M. Daly, P.C. Kipstein, M. Lakrimi, T.F. Kuech, Jiang Li, S.G. Lyapin, N.J. Mason, I.J. Murgatroyd, J.C. Portal, R.J. Nicholas, D.M. Symons, P. Vicente, and P.J. Walker, Journal of Crystal Growth, 170 (1997) 777-782.
11. "Photoluminescence Studies of Erbium-Doped GaAs under Hydrostatic Pressure," T.D. Culp, U. Hömmerich, J.M. Redwing, T.F. Kuech, and K.L. Bray, Journal of Applied Physics, 82 (1997) 368-374.
12. "A Mass Spectroscopic Study of the Vapor Phase Thermal Decomposition of Trimethylamine," A. Thon, D. Saulys, S.A. Safvi, D.F. Gaines, and T.F. Kuech, Journal of the Electrochemical Society, 144 (1997) 1127-1130.
13. "Thermally Stable PtSi Schottky Contact on n-GaN," Q.Z. Liu, L.S. Lu, S.S. Lau, J.M. Redwing, N.R. Perkins, and T.F. Kuech, Applied Physics Letters, 70 (1997) 1275-1278.
14. "Photoreflectance Study of the Long-Term Stability of Various Surface Chemical Treatments on (001) n-GaAs," J.F. Geisz, S.A. Safvi, and T.F. Kuech, Journal of the Electrochemical Society, 144 (1997) 732-736.
15. "Extended-spectral-range Fourier Transform Infrared-attenuated Total Reflection Spectroscopy on Si Surfaces using a Novel Si Coated Ge Attenuated Total Reflection Prism," E. Rudkevich, D.E Savage, W. Cai, J.C. Bean, J.S. Sullivan, S. Nayak, T.F. Kuech, L. McCaughan and M.G. Lagally, Journal of Vacuum Science and Technology A, 15 (1997) 2153-2157.
16. "Modulation of the Photoluminescence of Semiconductors by Surface Adduct Formation: An application of Inorganic Photochemistry to Chemical Sensing," A.B. Ellis, R.J. Brainard, K.D. Kepler, D.E. Moore, E.J. Winder, T.F. Kuech, and G.C. Lisensky, Journal of Chemical Education, 74 (1997) 680-684.
17. "Oxygen-Related Defects in Low Phosphorous Content GaAs1-yPy Grown by MOVPE," J.G. Cederberg, K.L. Bray and T.F. Kuech, Journal of Applied Physics, 82 (1997) 2263-2269.
18. Conference Proceeding: "The Uniformity of Surface Passivation After (NH4)2S Treatment Studied by Near-Field Scanning Optical Microscopy," Jutong Liu and T.F. Kuech, Materials Research Society Symposium Proceedings, 405 (1996) 415-420.
19. Conference Proceeding: "Gas Phase Adduct Reactions in MOCVD Growth of GaN," A. Thon and T.F. Kuech, Materials Research Society Symposium Proceedings, 395 (1996) 97-102.
20. Conference Proceeding: "Halide Vapor Phase Growth of Gallium Nitride Films on Sapphire and Silicon Substrates," N.R. Perkins, M.N. Horton, Z.Z. Bandic, T.C. McGill, and T.F. Kuech, Materials Rearch Society Symposium, 395 (1996) 243-248.
21. Conference Proceeding: "A Modeling Study of GaN Growth by MOVPE," S.F. Safvi, T.F. Kuech, Joan Redwing, and M.A. Tischler, Materials Research Society Symposium Proceedings, 395 (1996) 255-260.
22. "MOVPE II-VI Materials for Visible Light Emitters," T.F. Kuech and N.R. Perkins, Journal of Crystal Growth, 166 (1996) 558-565.
23. Book Chapter: "Chemical Vapor Deposition For Epitaxial Growth," T.F. Kuech in Electronics Materials Chemistry, Ed. B. Pogge, (Marcel Dekker, Inc, Boston, 1996).
24. "Influence of Oxygen on Surface Morphology of Metalorganic Vapor Phase Epitaxy Grown GaAs (001)," S. Nayak, J.W. Huang, J. M. Redwing, D.E. Savage, M.G. Lagally, and T.F. Kuech, Applied Physics Letters, 68 (1996) 1270-1272.
25. "Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy," B. Garni, Jian Ma, N. Perkins, Jutong Liu, T.F. Kuech, and M.G. Lagally, Applied Physics Letters, 68 (1996) 1380-1382.
26. "Interface Structures of InGaAs/InGaAsP/InGaP Quantum Well Laser Diodes Grown by Metal Organic Chemical Vapor Deposition on GaAs Substrates," A. Bhattacharya, L.J. Mawst, S. Nayak, J. Li, and T.F. Kuech, Applied Physics Letters, 68 (1996) 2240-2242.
27. "Strain-induced Band-gap Modulation in GaAs\AlGaAs Quantum Well Structure Using Thin-Film Stressors," F. Deng, Q.Z. Liu, L.S. Yu, Z.F. Guan, S.S. Lau, J. Redwing, J. Geisz, and T.F. Kuech, Journal of Applied Physics, 79 (1996) 1763-1771.
28. "Electrical Characterization of Mg-doped GaN grown by Metalorganic Vapor Phase Epitaxy," J.W. Huang, T.F. Kuech, H. Lu, and I. Bhat, Applied Physics Letters, 68 (1996) 2392-2394.
29. Conference Proceeding: "Optimization of Reactor Geometry and Growth Conditions for the GaN Halide Vapor Phase Epitaxy," S.A. Safvi, N.R. Perkins, M.N. Horton and T.F. Kuech, Materials Research Society Symposium Proceedings, 423 (1996) 227-232.
30. Conference Proceeding: "High Resolution X-Ray Diffraction Analysis of GaN Grown on Sapphire by Halide Vapor Phase Epitaxy," R. Matyi, D. Zhi, N.R. Perkins, M.N. Horton, and T.F. Kuech, Materials Research Society Symposium Proceedings, 423 (1996) 239-244.
31. Conference Proceeding: "Nucleation and Growth of Gallium Nitride on Si and Sapphire Substrates Using Buffer Layers," N.R. Perkins, M.N. Horton, D. Zhi, R.J. Matyi, Z.Z. Bandic, T.C. McGill, and T.F. Kuech, Materials Research Society Symposium Proceedings, 423 (1996) 287-292.
32. Conference Proceeding: "High Temperature Gas Phase Reactions of Trimethyl Gallium with NH3 and Trimethyl Amine," A. Thon, S.A. Safvi and T.F. Kuech, Materials Research Society Symposium Proceedings, 423 (1996) 445-450.
33. "Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy," J.W. Huang and T.F. Kuech, Hongqiang Lu and Ishwara Bhat, Materials Research Society Symposium Proceedings, 423 (1996) 601-606.
34. "High Temperature Adduct Formation of Trimethyl Gallium and Ammonia," A. Thon and T.F. Kuech, Applied Physics Letters, 69 (1996) 69-71.
35. "A Near-Field Scanning Optical Microscopy Study of the Uniformity of GaAs Surface Passivation," J.Liu and T.F. Kuech, Applied Physics Letters, 69 (1996) 662-664.
36. "Room Temperature Epitaxy of Pd Films on GaN under Conventional Vacuum Conditions," Q.Z. Liu, S.S. Lau, N. Perkins, and T.F. Kuech, Applied Physics Letters, 69 (1996) 1722-1724.
37. "Photoemission Spectroscopy Studies of the Surface of GaN Films Grown by Vapor Phase Epitaxy," Jian Ma, B. Garni, N. Perkins, W. O’Brien, T.F. Kuech and M.G. Lagally, Applied Physics Letters, 69 (1996) 3351-3353.
38. "A Near-Field Scanning Optical Microscopy Study of the Photoluminescence From GaN Films," Jutong Liu, N.R. Perkins, M.N. Horton, J.M. Redwing, M.A. Tischler, and T.F. Kuech, Applied Physics Letters, 69 (1996) 3519-3521.
39. "Chemical and Physical Effects in Oxygen Incorporation During Metal-organic Vapor Phase Epitaxial Growth of GaAs," T.F. Kuech, S. Nayak, J.-W. Huang, and J. Li, Journal of Crystal Growth, 163 (1996) 171-179.
40. Conference Proceeding: "A Study of MOVPE GaN Gas Phase Chemistry for Reactor Design and Optimization," S.A. Safvi, A. Thon, J.M. Redwing, M.A. Tischler, and T.F. Kuech, Ed. T.M. Besmann, M.D. Allendorf, McD. Robinson, and R.K. Ulrich, Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition, Pennington, NJ, 96 (The Electrochemical Society, 1996) 119-124.
41. Conference Proceeding: "Growth of Thick GaN Films by Halide Vapor Phase Epitaxy," N.R. Perkins, M.N. Horton, Z.Z. Bandic, T.C. McGill, T.F. Kuech, Ed. T.M. Besmann, M.D. Allendorf, McD. Robinson, and R.K. Ulrich, Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition, Pennington, NJ, 96 (The Electrochemical Society, 1996) 336-341.
42. "66% CW Wall Plug Efficiency From Al-Free 0.9 mm-emitting Lasers," D. Botez, L.J. Mawst, A. Bhattacharya, J. Lopez, J. Li, and T.F. Kuech, Electronics Letters, 32 (1996) 2012-2013.
43. "Compensation of shallow impurities in oxygen-doped metal organic vapor phase epitaxy grown GaAs," J. W. Huang, K.L. Bray and T. F. Kuech, Journal of Applied Physics, 80 (1996) 6819-6826.
44. Conference Proceeding: "Oxygen-Related Defects in High Purity MOVPE AlGaAs," J.M. Ryan, J.W. Huang, T.F. Kuech and K.L. Bray, Materials Research Society Symposium Proceedings, 421 (1996) 27-32.
45. Conference Proceeding: "Excitation Properties of Er-Doped GaP From Photoluminescence and High Pressure Studies," T.D. Culp, X.Z. Wang, T.F. Kuech, B. W. Wessels, and K.L. Bray, Materials Research Society Symposium Proceedings, 422 (1996) 279-284.
46. "Changing Photoluminescence Intensity from GaAs/Al0.3Ga0.7As Heterostructures upon Chemisorption of SO2," J.F. Geisz, T.F. Kuech, and A.B. Ellis, Journal of Applied Physics, 77 (1995) 1233-1240.
47. "Ultrafast Photodetector Materials Based on Oxygen-Doped MOVPE GaAs," M.Y. Frankel, J.W. Huang, and T.F. Kuech, Applied Physics Letters, 66 (1995) 634-636.
48. Invited Article: "The Chemistry and Growth of MOVPE-Based Selective Epitaxy," T.F. Kuech and S. Nayak, Proceedings from the NATO Advanced Research Workshop on Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 0 (1995) 207-218.
49. "Photoelastic Waveguides and the Controlled Introduction of Strain in III-V Semiconductors by Means of Thin Film Technology," Q.Z. Liu, F. Deng, L.S. Yu, Z.F. Guan, S.A. Papert, P.K. L. Yu, S.S. Lau, J.M. Redwing, and T.F. Kuech, Journal of Applied Physics, 78 (1995) 236-244.
50. "Controlled Oxygen Incorporation in Indium Gallium Arsenide and Indium Phosphide Grown by Metalorganic Vapor Phase Epitaxy," J.W. Huang, J.M. Ryan, K.L. Bray and T.F. Kuech, Journal of Electronic Materials, 24 (1995) 1539-1546.
51. "Oxygen Levels in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide," J.W. Huang, T.F. Kuech, and T.J.Anderson, Applied Physics Letters, 67 (1995) 1116-1118.
52. "Detection of Ammonia, Phosphine and Arsine Gases by Reversible Modulation of Cadmium Selenide Photoluminescence Intensity," E.J. Winder, D.E. Moore, D.R. Neu, A.B. Ellis, J.F. Geisz, and T.F. Kuech, Journal of Crystal Growth, 148 (1995) 63-69.
53. Conference Proceeding: "New Si CVD Precursors: Preparation and Prescreening," D.F. Gaines, M. Hop, T.F. Kuech, J.M. Redwing, D.A. Saulys, and A. Thon, Materials Research Society Symposium Proceedings, 377 (1995) 81-86.
54. Conference Proceeding: "Intentional Defect Incorporation in MOVPE Indium Gallium Arsenide by Oxygen Doping," J.W. Huang and T.F. Kuech, Materials Research Society Symposium Proceedings, 378 (1995) 165-170.
55. "PdAl Schottky Contact to In0.52Al0.48As Grown by Metalorganic Chemical Vapor Deposition," C.-F. Lin, Y.A. Chang, N. Pan, J.-W. Huang, and T.F. Kuech, Applied Physics Letters, 67 (1995) 3587-3589.
56. "In-Situ RHEED and AFM Investigation of Growth Front Morphology Evolution of Si(001) Grown by UHV-CVD," S. Nayak, D.E. Savage, H.-N. Chu, M.G. Lagally, and T.F. Kuech, Journal of Crystal Growth, 157 (1995) 168-171.
57. Conference Proceeding: "An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights," C.-P. Chen, Y.A. Chang, and T.F. Kuech, Materials Research Society Symposium Proceedings, 318 (1994) 147-152.
58. Conference Proceeding: "Changing PL Intensity from GaAs/Al0.3Ga0.7As Heterostructures Due to the Chemisorption of SO2: Effects of Heterostructure Geometry," J.F. Geisz, T.F. Kuech, and A.B. Ellis, Materials Research Society Symposium Proceedings, 318 (1994) 225-230.
59. "Strain Relaxation and Oxide Formation on Annealed W/C Multilayers," J.F. Geisz, Y.H. Phang, T.F. Kuech, and M.G. Lagally, Materials Research Society Symposium Proceedings, 318 (1994) 225.
60. Conference Proceeding: "Deep Level Structure of Semi-insulating MOVPE GaAs Grown by Controlled Oxygen Incorporation," J.W. Huang and T.F. Kuech, Materials Research Society Symposium Proceedings, 325 (1994) 305.
61. Conference Proceeding: "Photoelastic Waveguides Formed by Interfacial Reactions on Semiconductor Heterostructures," L.S. Yu, Z.F. Guan, F. Deng, Q.Z. Liu, S.A. Pappert, P.K.L. Yu, S.S. Lau, J.M. Redwing, J. Geisz, T.F. Kuech, H. Kattelus, and I. Suni, Materials Research Society Symposium Proceedings, 326 (1994) 251-256.
62. "Interfacial Roughness in GaAs/Al¬xGa1-xAs Multi-layers: Influence of Controlled Impurity Introduction," S. Nayak, J.M. Redwing, D. Savage, M.G. Lagally, and T.F. Kuech, Materials Research Society Symposium Proceedings, 332 (1994) 249-254.
63. Invited Review: "Controlled Impurity Introduction in CVD: Chemical, Electrical and Morphological Influences," T.F. Kuech, J.M. Redwing, J.W. Huang and S. Nayak, Materials Research Society Symposium Proceedings, 334 (1994) 189-200.
64. "Luminescence Kinetics of Intrinsic Excitonic States in High Quality Quantum-Mechanically Bound Near High Quality GaAs(n-)/ AlxGa1-xAs(p) Heterointerfaces," G.D. Gilliland, D.J. Wolford, T.F. Kuech, and J.A. Bradley, Physics Review B, 49 (1994) 8113-8125.
65. "Comparison of Transport, Recombination and Interfacial Quality in Molecular Beam Epitaxy and Organo-Metallic-Vapor-Phase-Epitaxy GaAs/ AlxGa1-xAs Structures," D.J. Wolford, G.D. Gilliland, T.F. Kuech, J. Klem, H.P. Hjalmarson, J.A. Bradley, C.F. Tsang, and J. Martinsen, Applied Physics Letters, 64 (1994) 1413-1415.
66. "Study of the Gas Phase Chemistry in the Silicon Doping of GaAs Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine as the Group V Source," J.M. Redwing, T.F. Kuech, D. Saulys, and D.F. Gaines, Journal of Crystal Growth, 135 (1994) 423-433.
67. "High Schottky Barrier Height of the Al/n-GaAs Diodes Achieved by Sputter Deposition," C.-P. Chen, Y.A. Chang, J.-W. Huang, and T.F. Kuech, Applied Physics Letters, 64 (1994) 1413-1415.
68. Conference Proceeding: "MOVPE Growth and Doping of ZnTe Using Tertiarybutylphosphine as the Metalorganic Doping Precursor," N.R. Perkins, D.F. Dawson-Elli and T.F. Kuech, Materials Research Society Symposium Proceedings, 340 (1994) 469-471.
69. "Multiple Deep Levels in Metal-Organic Vapor Phase Epitaxy GaAs Grown by Controlled Oxygen Incorporation," J.W. Huang and T.F. Kuech, Applied Physics Letters, 65 (1994) 604-606.
70. "Film Stress of Sputtered W/C Multilayers and Strain Relaxation upon Annealing," J. Geisz, T.F. Kuech, M.G. Lagally, and R.M. Potemski, Journal of Applied Physics, 75 (1994) 1530-1533.
71. "Effects of Temperature and Oxygen concentration on the Photoluminescence of Epitaxial MOVPE GaAs:O," J.M. Ryan, J.-W. Huang, T.F. Kuech, and K.L. Bray, Journal of Applied Physics, 76 (1994) 1175.
72. "Alkoxide Precursors for Controlled Oxygen Incorporation During MOVPE GaAs and AlxGa1 xAs Growth," J.W. Huang, D.F. Gaines, T.F. Kuech, R.M. Potemski, and F. Cardone, Journal of Electronic Materials, 23 (1994) 659-667.
73. "Growth Studies of Erbium-doped GaAs Deposited by Metal-organic Vapor Phase Epitaxy Using Novel Cyclopentadienyl-based Erbium Sources," J.M. Redwing, T.F. Kuech, D.C. Gordon, B.A. Vaarstra and S.S. Lau, Journal of Applied Physics, 76 (1994) 1585-1591.
74. Book Chapter: "Principles and Practice of OMVPE," D. Kisker and T.F. Kuech in Handbook of Crystal Growth, Vol. 3, Ed. D. Hurle, (Elsevier, 1994).
75. "Electrical Characterization of Semi-insulating Metal-organic Vapor Phase Epitaxy GaAs Grown by Controlled Oxygen Incorporation," J.W. Huang and T.F. Kuech, Journal of Crystal Growth, 145 (1994) 462-467.
76. "Carbon Doping in Metal-Organic Vapor Phase Epitaxy," T.F. Kuech and J. M. Redwing, Journal of Crystal Growth, 145 (1994) 382-389.
77. Book Chapter: "III-V Compound Semiconductor Films for Optical Applications," T.F. Kuech in Characterization in Compound Semiconductor Processing, Materials Characterization Series: Surfaces, , Ed. Y. Stausser and G.E. McGuire, (Butterworth-Heinemann, Boston, 1994).
78. "Study of Si Incorporation from SiH4 in GaAs grown by MOVPE using TBAs," J.M. Redwing, H. Simka, K.F. Jensen, T.F. Kuech, Journal of Crystal Growth, 145 (1994) 397-402.
79. "The Effect of Controlled Impurity Incorporation on Interfacial Roughness in GaAs/AlxGa1-xAs Superlattice Structures Grown by Metalorganic Vapor Phase Epitaxy," J. M. Redwing, S. Nayak, D.E. Savage, M.G. Lagally, D.F. Dawson-Elli, and T.F. Kuech, Journal of Crystal Growth, 145 (1994) 792-798.
80. "Temperature Dependent Radiative Recombination of Free-Excitons in High-Quality GaAs Heterostructures," H. P. Hjalmarson, G.D. Gilliland, D.J. Wolford, T.F. Kuech, and J.A. Bradley, Journal of Luminescence, 60 (1994) 830-833.
81. "The Role of Butyl Silanes in the Silicon Doping of Tertiary Butyl Arsine Based GaAs Growth," J.M. Redwing, T.F. Kuech, D. Saulys, D.F. Gaines, H. Simka, and K.F. Jensen, Journal of Crystal Growth, 145 (1994) 423.
82. Conference Proceeding: "Study of Si Incorporation in GaAs MOVPE Layers Grown with Tertiarybutylarsine," J.M. Redwing, T.F. Kuech, H. Simka and K.F. Jensen, Materials Research Society Symposium Proceedings, 334 (1994) 201-206.
83. Conference Proceeding: "A Proposed Regrowth Mechanism for the Enhancement of Schottky Barrier Height to n-GaAs," C.-P. Chen, Y.A. Chang and T.F. Kuech, Materials Research Society Symposium Proceedings , 337 (1994) 313-318.
84. Conference Proceeding: "Influence of Impurities on Mechanisms of Growth in MOVPE GaAs (001) Studied by AFM," S. Nayak, J.M. Redwing, J.W. Huang, D.E. Savage, M.G. Lagally and T.F. Kuech, Materials Research Society Symposium Proceedings, 374 (1994) 293.
85. Conference Proceeding: "A High Schottky Barrier Height of the Al/n-GaAs Diodes Achieved by Sputter Deposition," C.-P. Chen, Y.A. Chang, and T.F. Kuech, Materials Research Society Symposium Proceedings, 221 (1993) 693-697.
86. "Evolution of Sn Environment in AlGaAs Alloys," J. Pant, K. Pansewicz, J. Zhang, T.M. Hayes, D.L. Williamson, T.N. Theis, T.F. Kuech, and P. Gibart, Japanese Journal of Applied Physics Part 1, 32 (1993) 731-735.
87. "Optically Determined Minority-Carrier Transport in GaAs/ AlxGa1-xAs Heterostructures," D.J. Wolford, G.D. Gilliland, T.F. Kuech, J.A. Bradley, and H.P. Hjalmarson, Physics Review B, 47 (1993) 15601.
88. Conference Proceeding: "A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts," C.-P. Chen, C.-H. Yan, Y.A. Chang, and T.F. Kuech, Ed. D. C. Houghton, C. W. Tu and R. T. Tung, Materials Research Society Symposium Proceedings, 281 (1993) 683.
89. Conference Proceeding: "X-ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers," S. Nayak, J.M. Redwing, T.F. Kuech, Y.-H. Phang, D.E.Savage, and M. G. Lagally, Materials Research Society Symposium Proceedings, 312 (1993) 137-143.
90. "Lower Dimensional Quantum Structures by Selective Growth and Gas-phase Nucleation," K.J. Vahala, W.A. Saunders, C.S. Tsai, P.S. Sercel, T.F. Kuech, H.A. Atwater, and R.C. Flagen, Journal of Vacuum Science and Technology, 11 (1993) 1.
91. Invited Review: "Selective Epitaxy of Compound Semiconductors: Novel Sources," T.F. Kuech, Semiconductor Science and Technology, 8 (1993) 967-978.
92. Conference Proceeding: "Mechanisms of Carbon Incorporation of OMCVD of GaAs and Related Compounds," H. Simka, M. Masi, T. Merchant, K.F. Jensen and T.F. Kuech, Ed. K.F. Jensen and G.W. Cullen, Proceedings of the Twelfth International Conference on Chemical Vapor Deposition, Pennington, New Jersey, (The Electrochemical Society, 1993) 205-214.
93. Conference Proceeding: "Chemical Kinetic and Growth Studies of Doping and Growth Precursors," T.F. Kuech, J.M. Redwing, D. Saulys, D. F. Gaines, Ed. K.F. Jensen and G.W. Cullen, Proceedings of the Twelfth International Conference on Chemical Vapor Deposition, Pennington, New Jersey, (The Electrochemical Society, 1993) 196-204.
94. Editor: "Common Themes and Mechanisms of Epitaxial Growth," P. Fuoss, J. Tsao, D. Kisker, A. Zangwill, and T.F. Kuech, (Materials Research Society, Pittsburgh, PA, 1993).
95. "Minority Carrier Recombination Kinetics and Transport in 'Surface-free' GaAs/ Al¬xGa1-xAs Double Heterostructures," G.D. Gilliland, D.J. Wolford, T.F. Kuech, J.A. Bradley, H.P. Hjalmarson, Journal of Applied Physics, 73 (1993) 8386-8396.
96. "Optically-Determined Exciton Transport in GaAs Structures," G.D. Gilliland, D.J. Wolford, H.P. Hjalmarson, M.S. Petrovic, J. Klem, T.F. Kuech, G.A. Northrup, and J.A. Bradley, Acta Physica Polonica A, 84 (1993) 409-417.
97. "Diode Lasers," M.G.D. Baumann, J.C. Wright, A.B. Ellis, T.F. Kuech, and G.C. Lisensky, Journal of Chemical Education, 89 (1992) 89-95.
98. "Two Dimensional Modeling of the Growth of GaAs from (C2H5)2GaCl and AsH3," M. Hierlemann and T.F. Kuech, Journal of Crystal Growth, 124 (1992) 56-63.
99. "Growth Behavior of (C2H5)2GaCl and AsH3 based GaAs: Low Reactor pressure and Temperatures," T.F. Kuech, R.M. Potemski, and F. Cardone, Journal of Crystal Growth, 124 (1992) 318-325.
100. "Lattice Strain from DX Centers and Persistent Photocarriers in Sn-doped and Si-doped Ga¬xAl1-xAs," G.S.Cargill III, A. Segmüller, T.F. Kuech, and T.N.Theis, Physics Review B, 46 (1992) 10078-10085.
101. "Perspectives on MOVPE Growth: Chemistry, Structures, and Systems," T.F. Kuech, Thin Solid Films, 216 (1992) 77-83.
102. "Simulation of Carbon Doping of GaAs During MOVPE," M. Masi, H. Simka, K.F. Jensen, and T.F. Kuech, Journal of Crystal Growth, 124 (1992) 483-492.
103. "Improved Schottky Gate Characteristics for MOVPE-grown GaAs MESFETs," M.A. Tischler, D. Latulippe, T.F. Kuech, J.H. Magerlein, and H.J. Hovel, Journal of Crystal Growth, 124 (1992) 824-828.
104. Invited Review: "Recent Advances in Metalorganic Vapor Phase Epitaxy," T.F. Kuech, Proceedings of the IEEE, 80 (1992) 1609-1624.
105. Conference Proceeding: "Intrinsic and Interfacial Recombination in GaAs," G.D. Gilliland, D.J. Wolford, T.F. Kuech, J.A. Bradley, J. Klem, and H.P. Hjalmarson, Proceedings of the 21st International Converence on the Physics of Semiconductors, Beijing, China, (World Scientific, 1992) 1743.
106. "Interface States and the Transport of Two-dimensional Interface Excitons in AlGaAs/GaAs Structures," G.D. Gilliland, D.J. Wolford, G.A. Northrup, M.S. Petrovic, T.F. Kuech, and J.A. Bradley, Journal of Vacuum Science and Technology, 10 (1992) 1959.
107. "X-ray Diffraction Determination of Interfacial Roughness Correlation in SixGe1-x/Si and GaAs/AlxGa1-xAs Superlattices," Y.-H. Phang, D.E. Savage, T.F. Kuech, M.G. Lagally, P.S. Park, and K.L. Wang, Applied Physics Letters, 60 (1992) 2986-2988.
108. Conference Proceeding: "Free-Exciton Recombination in GaAs," D.J. Wolford, G.D. Gilliland, T.F. Kuech, J.A. Bradley, H.P. Hjalmarson, and J. Klem, Proceedings of the 21st International Conference on the Physics of Semiconductors, Beijing, China, (World Scientific, 1992) 1743.
109. Book Chapter: "OMVPE of Compound Semiconductors," T.F. Kuech and K.F.Jensen in Thin Film Processes II, Ed. John L. Vossen and Werner Kern, (Academic Press, Orlando, 1991).
110. Editor: "Atomic Layer Growth and Processing," T.F. Kuech, P.D. Dapkus, and Y. Aoyagi, (Materials Research Society, Pittsburgh, PA, 1991).